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Erstellt am 31. Juli 2026

Doctoral candidate position (m/w/d) (DC6) Metrology on a wafer level (electrical/optical characterization of 3C-SiCOI stacks)

Zentrale Universitätsverwaltung
Erlangen 91058, Germany Temporär
Reference: 358761987

The semiconductor material silicon carbide (SiC) has established itself as the standard semiconductor material in power electronics. New applications in photonics are also emerging that take advantage of the extraordinary physical properties of SiC. In the EU project SiCPiC the so-called CVD (Chemical Vapor Deposition) and CS-PVT (Close-Space Physical-Vapor-Transport) processes are investigated with regard to their use in new photonic applications of SiC. https://electro.dtu.dk/newsarchive/2025/08/doctoral-network-harnesses-silicon-carbide-to-power-a-new-era-of-photonic-chips

Benefits: We Have a Lot To Offer

  • Regelmäßiger Stufenanstieg und steigendes Gehalt nach Tarifvertrag für den öffentlichen Dienst der Länder (TV-L) beziehungsweise Besoldung nach BayBesG sowie zusätzliche Jahressonderzahlung
  • Urlaubsanspruch von 30 Tagen pro Kalenderjahr bei fünf Arbeitstagen pro Woche, mit zusätzlichen freien Tagen am 24. und 31. Dezember
  • Betriebliche Altersversorgung sowie vermögenswirksame Leistungen
  • Intensive Begleitung in der wissenschaftlichen Qualifikationsphase
  • Promotion in einem strukturierten Programm
  • Systematische Karriereentwicklung im Graduiertenzentrum
  • Umfassende Einarbeitung durch engagiertes Team
  • Gemeinsame Aktivitäten im Team
  • Vergünstigtes Essens- und Getränkeangebot in unseren Mensen
  • Arbeitsplätze in fußläufiger Nähe zum öffentlichen Nahverkehr
  • Familienfreundliche Umgebung mit Ferien- und Kinderbetreuungsangeboten
  • Flexible Arbeitszeitregelungen
  • Vielfältige Weiterbildungs- und Fortbildungsmöglichkeiten
  • Aktives Gesundheitsmanagement

Your Tasks

In the EU project SiCPiC the so-called CVD (Chemical Vapor Deposition) and CS-PVT (Close-Space Physical-Vapor-Transport) processes are investigated with regard to their use in new photonic applications of SiC. The tasks of the three doctoral candidate (DC3,5,6) positions at the Crystal Growth Lab at FAU CGL include SiC layer fabrication, surface preparation and electrical-optical characterisation. ML/AI assisted methods support the experiment planning and analysis. It is expected that all three doctoral candidates collaborate together beyond their own research focus. Each of the three doctoral candidate positions focus on one of the three tasks: DC6 focusses on Metrology on a wafer level (focus on electrical/optical characterization) and ML/AI assisted data anlysis.

The doctoral positions offer the opportunity to participate in the international EU project SiCPiC. In cooperation with partners in Europe, short stays abroad for specialist meetings and research activities are mandatory.

Your Profile

Required qualifications: Excellent master's degree in materials science, nanotechnology, electrical engineering, physics, or a comparable field / Good written and spoken English skills / Ability to work independently and as part of an interdisciplinary team / Positive attitude, enjoyment of research, and finding new solutions.

Due to restrictive legal requirements for technology export control, project staff must be citizens of the European Union, Switzerland, Norway, Island, Japan or the USA/Canada/Australia/New Zeeland.

Desirable qualifications: Previous knowledge in the field of materials characterization of semiconductors and ML/AI assisted data analysis are an advantage.

Additional Information

Job position: Three-years research contract (full position 100%) under the rules of the MSCA Doctoral Network (see 1.1 Applicable unit contribution https://ec.europa.eu/info/funding-tenders/opportunities/docs/2021-2027/... )

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